III-nitride photonic crystals
Identifieur interne : 00C095 ( Main/Repository ); précédent : 00C094; suivant : 00C096III-nitride photonic crystals
Auteurs : RBID : Pascal:03-0350274Descripteurs français
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- 7867D, 8105E, 8107S, 8116N, 5277B, 8165C, 6837U, Etude expérimentale, Indium composé, Gallium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Puits quantique semiconducteur, Nanotechnologie, Lithographie faisceau électron, Gravure pulvérisation, Microscopie optique champ proche.
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Abstract
We report the achievement of nanofabrication and characterization of a triangular lattice array of photonic crystals (PCs) with diameter/periodicity as small as 100/180 nm on an InGaN/GaN multiple quantum well using electron-beam lithography and inductively coupled plasma dry etching. Optical measurements of the PCs performed using near-field scanning optical microscopy showed a 60° periodic variation with the angle between the propagation direction of emission light and the PCs lattice. An unprecedented maximum enhancement factor of 20 was obtained for the emission light intensity at wavelengths as short as 475 nm at room temperature with emission light parallel to the Γ-K direction of the PCs lattice. The implications of these results to nitride-based optoelectronic devices, particularly in improving the light extraction efficiency in light-emitting diodes both for blue/green as well as UV emitters, are discussed. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">III-nitride photonic crystals</title><author><name sortKey="Oder, T N" uniqKey="Oder T">T. N. Oder</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Shakya, J" uniqKey="Shakya J">J. Shakya</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Lin, J Y" uniqKey="Lin J">J. Y. Lin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Jiang, H X" uniqKey="Jiang H">H. X. Jiang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0350274</idno><date when="2003-08-11">2003-08-11</date><idno type="stanalyst">PASCAL 03-0350274 AIP</idno><idno type="RBID">Pascal:03-0350274</idno><idno type="wicri:Area/Main/Corpus">00CD34</idno><idno type="wicri:Area/Main/Repository">00C095</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electron beam lithography</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Nanotechnology</term><term>Near-field scanning optical microscopy</term><term>Semiconductor quantum wells</term><term>Sputter etching</term><term>Wide band gap semiconductors</term><term>photonic crystals</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7867D</term><term>8105E</term><term>8107S</term><term>8116N</term><term>5277B</term><term>8165C</term><term>6837U</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Puits quantique semiconducteur</term><term>Nanotechnologie</term><term>Lithographie faisceau électron</term><term>Gravure pulvérisation</term><term>Microscopie optique champ proche</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Nanotechnologie</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report the achievement of nanofabrication and characterization of a triangular lattice array of photonic crystals (PCs) with diameter/periodicity as small as 100/180 nm on an InGaN/GaN multiple quantum well using electron-beam lithography and inductively coupled plasma dry etching. Optical measurements of the PCs performed using near-field scanning optical microscopy showed a 60° periodic variation with the angle between the propagation direction of emission light and the PCs lattice. An unprecedented maximum enhancement factor of 20 was obtained for the emission light intensity at wavelengths as short as 475 nm at room temperature with emission light parallel to the Γ-K direction of the PCs lattice. The implications of these results to nitride-based optoelectronic devices, particularly in improving the light extraction efficiency in light-emitting diodes both for blue/green as well as UV emitters, are discussed. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>83</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>III-nitride photonic crystals</s1></fA08><fA11 i1="01" i2="1"><s1>ODER (T. N.)</s1></fA11><fA11 i1="02" i2="1"><s1>SHAKYA (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>LIN (J. Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>JIANG (H. X.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>1231-1233</s1></fA20><fA21><s1>2003-08-11</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0350274</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report the achievement of nanofabrication and characterization of a triangular lattice array of photonic crystals (PCs) with diameter/periodicity as small as 100/180 nm on an InGaN/GaN multiple quantum well using electron-beam lithography and inductively coupled plasma dry etching. Optical measurements of the PCs performed using near-field scanning optical microscopy showed a 60° periodic variation with the angle between the propagation direction of emission light and the PCs lattice. An unprecedented maximum enhancement factor of 20 was obtained for the emission light intensity at wavelengths as short as 475 nm at room temperature with emission light parallel to the Γ-K direction of the PCs lattice. The implications of these results to nitride-based optoelectronic devices, particularly in improving the light extraction efficiency in light-emitting diodes both for blue/green as well as UV emitters, are discussed. © 2003 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H67D</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A05Y</s0></fC02><fC02 i1="04" i2="X"><s0>001D03F17</s0></fC02><fC02 i1="05" i2="3"><s0>001B50B75R</s0></fC02><fC02 i1="06" i2="3"><s0>001B80A65</s0></fC02><fC02 i1="07" i2="3"><s0>001B60A16C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7867D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8105E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>8107S</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>8116N</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>5277B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>8165C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>6837U</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>photonic crystals</s0><s4>INC</s4></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Nanotechnologie</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Nanotechnology</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Lithographie faisceau électron</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Electron beam lithography</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Gravure pulvérisation</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Sputter etching</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Microscopie optique champ proche</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Near-field scanning optical microscopy</s0></fC03><fN21><s1>246</s1></fN21><fN47 i1="01" i2="1"><s0>0331M000158</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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